Title :
A new enhancement layer to improve copper interconnect performance
Author :
Huang, Hung Yi ; Hsieh, C.H. ; Jeng, S.M. ; Tao, H.J. ; Cao, Min ; Mii, Y.J.
Author_Institution :
Taiwan Semicond. Manuf. Co., Ltd. (TSMC), Hsinchu, Taiwan
Abstract :
This study reports the effect of different barrier on Cu interconnect performance. A thin “enhancement” layer of Ru or Co film is deposited between a PVD Ta(N) liner barrier and a Cu seed layer to improve copper to barrier adhesion and copper gap fill. With the enhancement layer of either Ru or Co, no void is found in dual damascene structure with very thin seed. The electrical performance is improved with more than two times of EM lifetime is observed. The seedless electroplating on the enhancement layers capability will maximize the gap fill window.
Keywords :
copper; integrated circuit interconnections; ruthenium; Co film; Cu interconnect performance; PVD Ta(N) liner barrier; Ru film; copper gap fill; copper interconnect performance; copper to barrier adhesion; dual damascene structure; electrical performance; electroplating; enhancement layer; Adhesives; Atherosclerosis; Cities and towns; Copper alloys; Electric resistance; Electronic mail; Semiconductor device manufacture; Semiconductor films; Testing; Thermal resistance;
Conference_Titel :
Interconnect Technology Conference (IITC), 2010 International
Conference_Location :
Burlingame, CA
Print_ISBN :
978-1-4244-7676-3
DOI :
10.1109/IITC.2010.5510762
