Title :
Investigation of failures on dual-dies stacked package
Author :
Yi Heng Chen ; Lin, W.B. ; Hsien Wei Huang ; Meiying Hsiao ; Chen-Hsien Ko
Author_Institution :
Reliability Testing & Failure Anal. Dept., Powerchip Technol. Corp., Hsinchu, Taiwan
Abstract :
The exploration for higher performance in memory has steered the industry towards dual-dies architectures which has significantly increased the challenges in silicon-package integration. In dual-dies package (DDP) technology is recommended to pack two semiconductor chips within one single package module. In our dual-die package use of a back-to-back die stacked configurations with two high-capacity DRAM chips in one single package module to enhance the performance of DRAM devices. During reliability qualification, suffered abnormalities occurrence and we conducted failures analyses and studied failure root causes. From investigation results, both failure analyses and generation mechanism are reported.
Keywords :
DRAM chips; elemental semiconductors; failure analysis; integrated circuit packaging; integrated circuit reliability; silicon; DDP technology; Si; back-to-back die stacked configurations; dual-dies stacked package technology; failure root causes; failures analyses; generation mechanism; high-capacity DRAM chips; reliability qualification; semiconductor chips; silicon-package integration; single package module; Corrosion; Failure analysis; Moisture; Reliability; Stress; Substrates;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location :
Suzhou
Print_ISBN :
978-1-4799-1241-4
DOI :
10.1109/IPFA.2013.6599233