On the modelling of multiterminal bipolar devices for smart-power applications

Smart-power bipolar circuits cannot be correctly simulated by classical four terminal models. There is no way to predict the influence of the high-voltage transistor over the control components. This work introduces a five-terminal DC model for the low-voltage devices that takes into account all the parasitic effects introduced by the four-junction structure. The model parameters can be easily extracted by a manual procedure producing a good fit that can be further improved by an automatic optimization procedure