Title :
Nanoscale Triple Material Double Gate (TM-DG) MOSFET for Improving Short Channel Effects
Author :
Razavi, Pedram ; Orouji, Ali A.
Author_Institution :
Electr. Eng. Dept., Semnan Univ., Semnan
fDate :
Sept. 29 2008-Oct. 4 2008
Abstract :
In this paper, a novel double-gate (DG) MOSFET in which the top and bottom gates consist of three laterally contacting material with different work functions is proposed. Using two-dimensional (2-D) device simulation, improvement of short channel effects such as drain-induced barrier lowering (DIBL), hot-carrier effects and channel length modulation (CLM) are investigated and compared with the dual material double-gate MOSFET and conventional DG MOSFET. This structure exhibits significantly improved short channel effects (SCEs) when compared with the conventional DG MOSFET.
Keywords :
MOSFET; hot carriers; semiconductor device models; work function; 2D device simulation; different work functions; laterally contacting material; nanoscale triple material double gate MOSFET; short channel effects; Acceleration; Conducting materials; Contacts; Delta modulation; Doping; Electrodes; Hot carrier effects; MOSFET circuits; Nanostructured materials; Two dimensional displays;
Conference_Titel :
Advances in Electronics and Micro-electronics, 2008. ENICS '08. International Conference on
Conference_Location :
Valencia
Print_ISBN :
978-0-7695-3370-4
Electronic_ISBN :
978-0-7695-3370-4
DOI :
10.1109/ENICS.2008.33
