Title :
A comparison of planarization properties of TEOS and SiH/sub 4/ PECVD oxides
Author :
Magnella, Chris G. ; Ingwersen, Tammy ; Fleck, Earl
Author_Institution :
Harris Corp., Melbourne, FL, USA
Abstract :
TEOS and SiH/sub 4/ PECVD films were deposited over patterned polysilicon in a parallel plate batch reactor. Both films were then etched using an etchback planarization process. Deposition and etch uniformity and quality were compared using optical thickness measurements and SEM (scanning electron microscope) cross sections. Electrical yield was also calculated for contact strings using each type of oxide. Nitrous oxide and oxygen were compared as reactants with TEOS. The use of O/sub 2/ gave the best TEOS product wafer deposition uniformity, 13.3% (3 sigma ). Overall uniformity for SiH/sub 4/ PECVD product wafers was 15.5% (3 sigma ). Etch uniformity was 5.0% (3 sigma ) for TEOS compared to 17.0% (3 sigma ) for SiH/sub 4/ films. TEOS step coverage before and after the etch was superior to SiH/sub 4/.<>
Keywords :
CVD coatings; integrated circuit technology; organic compounds; oxidation; plasma deposited coatings; scanning electron microscope examination of materials; silicon compounds; sputter etching; PECVD films; SEM; Si-SiO/sub 2/; SiH/sub 4/; contact strings; electrical yield; etch uniformity; etchback planarization; optical thickness measurements; parallel plate batch reactor; patterned polysilicon; step coverage; tetraethylorthosilicate; wafer deposition uniformity; Boats; Etching; Geometry; Inductors; Optical films; Optical refraction; Optical variables control; Planarization; Temperature; Thickness measurement;
Conference_Titel :
VLSI Multilevel Interconnection Conference, 1988. Proceedings., Fifth International IEEE
Conference_Location :
Santa Clara, CA, USA
DOI :
10.1109/VMIC.1988.14214
