• DocumentCode
    3039345
  • Title

    A 5 V-only 16 Mb flash memory with sector-erase mode

  • Author

    Jinbo, T. ; Nakata, H. ; Hashimoto, K. ; Watanabe, T. ; Ninomiya, K. ; Urai, T. ; Koike, M. ; Sato, T. ; Kodama, N. ; Oyama, K.-I. ; Okazawa, T.

  • Author_Institution
    NEC Corp., Sagamihara, Japan
  • fYear
    1992
  • fDate
    19-21 Feb. 1992
  • Firstpage
    154
  • Lastpage
    155
  • Abstract
    A 5-V-only 16-Mb CMOS flash memory with sector erase mode which uses 0.6- mu m double-layer metal CMOS technology is described. The optimized memory cell and channel erase are keys to 5-V-only operation. With this erase method, positive pulses are applied to the channel area and negative high-voltage pulses are applied to a control gate using row decoders, realizing a 512-word sector erase.<>
  • Keywords
    CMOS integrated circuits; EPROM; VLSI; 0.6 micron; 16 Mbit; 5 V; CMOS; EEPROM; ULSI; cell erase; channel erase; double-layer metal; flash memory; row decoders; sector-erase mode; Charge pumps; Circuits; Decoding; Delay; EPROM; Flash memory; Latches; Pulse amplifiers; Switches; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Solid-State Circuits Conference, 1992. Digest of Technical Papers. 39th ISSCC, 1992 IEEE International
  • Conference_Location
    San Francisco, CA, USA
  • Print_ISBN
    0-7803-0573-6
  • Type

    conf

  • DOI
    10.1109/ISSCC.1992.200458
  • Filename
    200458
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3039345