Title :
Compositionally graded C-doped In1-xGaxAs base in InP/InGaAs D-HBTs grown by MOCVD with low base sheet resistance and high current gain
Author :
Ohkubo, M. ; Osabe, J. ; Ikeda, N. ; Ninomiya, T.
Author_Institution :
R&D Labs., Furukawa Electr. Co. Ltd., Yokohama, Japan
Abstract :
MOCVD-grown carbon (C)-doped InGaAs layers using CBr4 as a C source were investigated with the van der Pauw method and PL measurement. A hole concentration of as high as 7×1019 cm-3 was obtained at a growth temperature of 385°C. However, PL intensity of the C-InGaAs depends on the growth temperature, and was weaker than that of Mg- or Zn-doped InGaAs at a range of over 1×1019 cm-3. Furthermore, DC measurement of D-HBTs revealed that there existed a strict tradeoff between the current gain and base sheet resistance of C-InGaAs uniform-base D-HBTs. To break through the tradeoff, we have fabricated D-HBTs with 150-nm-thick strain-compensated graded-In1-xGaxAs-base (X=0.42⇒0.53). As a result, a current gain of 55 with a base sheet resistance of 480 Ω/□ was achieved
Keywords :
III-V semiconductors; carbon; electric resistance; gallium arsenide; heterojunction bipolar transistors; hole density; indium compounds; photoluminescence; semiconductor doping; semiconductor growth; vapour phase epitaxial growth; 150 nm; 385 C; CBr4; DC measurement; InP; InP-InGaAs:C; InP/InGaAs D-HBTs; MOCVD growth; PL measurement; compositionally graded In1-xGaxAs:C base; growth temperature; high current gain; hole concentration; low base sheet resistance; strain-compensated graded base; tetrafluoromethane; van der Pauw method; Annealing; Doping; Etching; Hydrogen; Indium gallium arsenide; Indium phosphide; MOCVD; Photoluminescence; Substrates; Temperature;
Conference_Titel :
Indium Phosphide and Related Materials, 1997., International Conference on
Conference_Location :
Cape Cod, MA
Print_ISBN :
0-7803-3898-7
DOI :
10.1109/ICIPRM.1997.600253
