Title :
Nonlinear integral modelling of microwave silicon bipolar transistors
Author :
Torcolacci, D. ; Rinaldi, P. ; Santarelli, A. ; Vannini, G. ; Monaco, V.A.
Author_Institution :
Consorzio per la Ricerca sulla Microelettronica nel Mezzogiorno, Catania, Italy
Abstract :
In the paper, a previously proposed black-box modelling approach is applied for the large-signal performance prediction of microwave silicon bipolar transistors. Experimental and simulation results confirming the accuracy of the model are provided. Preliminary considerations concerning parasitic de-embedding, which can improve the range of validity of the model, are also discussed
Keywords :
elemental semiconductors; integral equations; microwave bipolar transistors; semiconductor device models; silicon; Si; black-box modelling approach; large-signal performance prediction; microwave bipolar transistors; nonlinear integral modelling; parasitic de-embedding; validity range; Bipolar transistors; Circuit analysis; Circuit simulation; Computational modeling; Design automation; Electron devices; Integral equations; Mathematical model; Silicon; Voltage;
Conference_Titel :
Electrotechnical Conference, 1996. MELECON '96., 8th Mediterranean
Conference_Location :
Bari
Print_ISBN :
0-7803-3109-5
DOI :
10.1109/MELCON.1996.551611
