• DocumentCode
    3039538
  • Title

    Spin orbit coupling in InSb multi-valleys

  • Author

    Wang, Wei ; Zhang, Minghua

  • Author_Institution
    Dept. of Phys., Jining Univ., Qufu, China
  • fYear
    2011
  • fDate
    26-28 July 2011
  • Firstpage
    6023
  • Lastpage
    6024
  • Abstract
    With the help of sp3d5s* tight-binding model, we calculate the spin orbit splitting in the whole Brillouin zone deriving from InSb Γ-valley of the lowest electronic subband, heavy hole, light hole and split-off hole. The cases of L and X-valleys with higher energy for the lowest electronic subband are also discussed. We further present the electron spin orbit coupling parameter at the corresponding valley bottom. Our results should be useful for the on-going study on spin dynamics in InSb.
  • Keywords
    band structure; indium compounds; semiconductor materials; spin dynamics; spin-orbit interactions; tight-binding calculations; Brillouin zone; InSb; heavy hole; light hole; lowest electronic subband; multivalleys; sp3d5s* tight-binding model; spin dynamics; spin orbit coupling; split-off hole; Charge carrier processes; Couplings; Magnetoelectronics; Orbits; Scattering; Solids; semiconductor; spin orbit coupling; spintronics;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Multimedia Technology (ICMT), 2011 International Conference on
  • Conference_Location
    Hangzhou
  • Print_ISBN
    978-1-61284-771-9
  • Type

    conf

  • DOI
    10.1109/ICMT.2011.6002541
  • Filename
    6002541