DocumentCode
3039538
Title
Spin orbit coupling in InSb multi-valleys
Author
Wang, Wei ; Zhang, Minghua
Author_Institution
Dept. of Phys., Jining Univ., Qufu, China
fYear
2011
fDate
26-28 July 2011
Firstpage
6023
Lastpage
6024
Abstract
With the help of sp3d5s* tight-binding model, we calculate the spin orbit splitting in the whole Brillouin zone deriving from InSb Γ-valley of the lowest electronic subband, heavy hole, light hole and split-off hole. The cases of L and X-valleys with higher energy for the lowest electronic subband are also discussed. We further present the electron spin orbit coupling parameter at the corresponding valley bottom. Our results should be useful for the on-going study on spin dynamics in InSb.
Keywords
band structure; indium compounds; semiconductor materials; spin dynamics; spin-orbit interactions; tight-binding calculations; Brillouin zone; InSb; heavy hole; light hole; lowest electronic subband; multivalleys; sp3d5s* tight-binding model; spin dynamics; spin orbit coupling; split-off hole; Charge carrier processes; Couplings; Magnetoelectronics; Orbits; Scattering; Solids; semiconductor; spin orbit coupling; spintronics;
fLanguage
English
Publisher
ieee
Conference_Titel
Multimedia Technology (ICMT), 2011 International Conference on
Conference_Location
Hangzhou
Print_ISBN
978-1-61284-771-9
Type
conf
DOI
10.1109/ICMT.2011.6002541
Filename
6002541
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