DocumentCode
3039578
Title
Energy efficient programming of nanoelectronic synaptic devices for large-scale implementation of associative and temporal sequence learning
Author
Kuzum, Duygu ; Jeyasingh, Rakesh G D ; Wong, H. -S Philip
Author_Institution
Stanford Univ., Stanford, CA, USA
fYear
2011
fDate
5-7 Dec. 2011
Abstract
A nanoscale, two-terminal device emulating plasticity and energy efficiency of biological synapses is a critical element for realizing brain-inspired computational systems and real-time brain simulators. In this work, we explore the use of phase change materials (PCM), widely used for memory applications, to build electronic synapses which implement synaptic plasticity with picojoule level energy consumption. Gradual switching characteristics and different spike schemes are discussed from implementation of synaptic plasticity and energy consumption perspectives. Our simulations demonstrate that a recurrent network of PCM synapses in a crossbar array can achieve brain-like associative and temporal sequence learning. Asymmetric plasticity is shown to transform temporal information into spatial information for sequence learning. Symmetric plasticity enables the storage and recall of certain patterns associatively by acting as a coincidence detector for neuronal activity.
Keywords
brain; energy consumption; learning (artificial intelligence); neurophysiology; phase change materials; phase change memories; associative sequence learning; biological synapses; brain-inspired computational systems; crossbar array; energy efficient programming; gradual switching; large-scale implementation; nanoelectronic synaptic devices; neuronal activity; phase change materials; picojoule level energy consumption; real-time brain simulators; recurrent network; synaptic plasticity; temporal sequence learning; two-terminal device; Artificial neural networks; Biological system modeling; CMOS integrated circuits; Nanobioscience; Programming; Semiconductor device modeling;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location
Washington, DC
ISSN
0163-1918
Print_ISBN
978-1-4577-0506-9
Electronic_ISBN
0163-1918
Type
conf
DOI
10.1109/IEDM.2011.6131643
Filename
6131643
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