Radiation response analyzer of semiconductor dies

Author

Mu Yifei ; Zhao Cezhou ; Su Shengmao ; Zhao Yue ; Mitrovic, Ivona ; Taylor, Stephen ; Chalker, Paul

Author_Institution

Dept. of Electr. Eng. & Electron., Univ. of Liverpool, Liverpool, UK

fYear

2013

fDate

15-19 July 2013

Firstpage

682

Lastpage

685

Abstract

A novel technique of the on-site and real-time gamma ray radiation response analysis for semiconductor dies is proposed in the paper. Fundamental analysis of the die´s radiation effects were demonstrated using the pulse current-voltage, the pulse capacitance-voltage and the pulse On-The-Fly measurements based on a probe station testing system which contains a lead container and a 10GBq ¹³⁷Cs source. Radiation response of high-k/SiO₂ stacks based gate oxides was investigated on site and in real time using the proposed analyzer.

Keywords

MOS integrated circuits; gamma-ray effects; high-k dielectric thin films; integrated circuit reliability; integrated circuit testing; silicon compounds; ¹³⁷Cs; SiO₂; die radiation effects; high-k stacks based gate oxides; probe station testing system; pulse capacitance-voltage measurement; pulse current-voltage measurement; pulse on-the-fly measurement; radiation response analyzer; real-time gamma ray radiation response analysis; semiconductor dies; Decision support systems; Failure analysis; Hafnium; Integrated circuits; high-k dielectrics; radiation effects;

fLanguage

English

Publisher

ieee

Conference_Titel

Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the

Conference_Location

Suzhou

ISSN

1946-1542

Print_ISBN

978-1-4799-1241-4

Type

conf

DOI

10.1109/IPFA.2013.6599252

Filename

6599252