• DocumentCode
    3039598
  • Title

    Quantum transport in deterministically implanted single-donors in Si FETs

  • Author

    Shinada, T. ; Hori, M. ; Guagliardo, F. ; Ferrari, G. ; Komatubara, A. ; Kumagai, K. ; Tanii, T. ; Endo, T. ; Ono, Y. ; Prati, E.

  • Author_Institution
    Waseda Inst. for Adv. Study, Waseda Univ., Tokyo, Japan
  • fYear
    2011
  • fDate
    5-7 Dec. 2011
  • Abstract
    Si transistors with deterministically implanted donors were fabricated by single-ion implantation method and their quantum transport was investigated. By placing donors in one dimensional array, we observed the transport characteristics categorized into two regimes: single-electron tunneling through isolated D0 and D- states; Hubbard band formation due to the inter-donor coupling.
  • Keywords
    Hubbard model; elemental semiconductors; field effect transistors; ion implantation; silicon; single electron transistors; FET; Hubbard band formation; Si; interdonor coupling; isolated D° state; isolated D- state; quantum transport; single-donor implantation; single-electron tunneling; single-ion implantation method; Doping; Ions; Logic gates; Silicon; Substrates; Temperature measurement; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2011 IEEE International
  • Conference_Location
    Washington, DC
  • ISSN
    0163-1918
  • Print_ISBN
    978-1-4577-0506-9
  • Electronic_ISBN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.2011.6131644
  • Filename
    6131644
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3039598