DocumentCode :
3039598
Title :
Quantum transport in deterministically implanted single-donors in Si FETs
Author :
Shinada, T. ; Hori, M. ; Guagliardo, F. ; Ferrari, G. ; Komatubara, A. ; Kumagai, K. ; Tanii, T. ; Endo, T. ; Ono, Y. ; Prati, E.
Author_Institution :
Waseda Inst. for Adv. Study, Waseda Univ., Tokyo, Japan
fYear :
2011
fDate :
5-7 Dec. 2011
Abstract :
Si transistors with deterministically implanted donors were fabricated by single-ion implantation method and their quantum transport was investigated. By placing donors in one dimensional array, we observed the transport characteristics categorized into two regimes: single-electron tunneling through isolated D0 and D- states; Hubbard band formation due to the inter-donor coupling.
Keywords :
Hubbard model; elemental semiconductors; field effect transistors; ion implantation; silicon; single electron transistors; FET; Hubbard band formation; Si; interdonor coupling; isolated D° state; isolated D- state; quantum transport; single-donor implantation; single-electron tunneling; single-ion implantation method; Doping; Ions; Logic gates; Silicon; Substrates; Temperature measurement; Transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
ISSN :
0163-1918
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
Type :
conf
DOI :
10.1109/IEDM.2011.6131644
Filename :
6131644
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3039598
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