• DocumentCode
    3039613
  • Title

    Integration of nanoelectromechanical (NEM) relays with silicon CMOS with functional CMOS-NEM circuit

  • Author

    Chong, Soogine ; Lee, Byoungil ; Parizi, Kokab B. ; Provine, J. ; Mitra, Subhasish ; Howe, Roger T. ; Wong, H. -S Philip

  • Author_Institution
    Dept. of Electr. Eng., Stanford Univ., Stanford, CA, USA
  • fYear
    2011
  • fDate
    5-7 Dec. 2011
  • Abstract
    This paper demonstrates electrical results of an integrated Si CMOS-electrostatically actuated nanoelectromechanical (NEM) relay circuit. This is an initial step towards realizing previously proposed NEM-CMOS hybrid circuits that predict various benefits compared to CMOS-only circuits. In this work, an e-beam patterned laterally actuated Pt NEM relay is fabricated at CMOS-compatible temperatures (≤ 400 °C) on top of CMOS and is driven by an on-chip CMOS inverter at VDD = 6 V.
  • Keywords
    CMOS integrated circuits; elemental semiconductors; nanoelectromechanical devices; silicon; Si; e-beam; functional CMOS-NEM hybrid circuit; nanoelectromechanical relays; voltage 6 V; CMOS integrated circuits; Fabrication; Inverters; Lithography; Logic gates; Relays; Switching circuits;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2011 IEEE International
  • Conference_Location
    Washington, DC
  • ISSN
    0163-1918
  • Print_ISBN
    978-1-4577-0506-9
  • Electronic_ISBN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.2011.6131645
  • Filename
    6131645