DocumentCode
3039636
Title
The worst stress condition of hot carrier degradation on high voltage LDMOSFET
Author
Huayang, Sarah Zhou ; Yongliang Song ; Zhuo Song ; Yanju, Lisa Yu ; Yong, Atman Zhao ; Wu, Junyong ; Chang, V. ; Chien, Kary
Author_Institution
Semicond. Manuf. Int. Corp., Shanghai, China
fYear
2013
fDate
15-19 July 2013
Firstpage
694
Lastpage
696
Abstract
This paper reports the research of applying the worst stress condition of thick gate oxide LDMOSFET hot carrier reliability. Based on electrical characteristic and hot carrier degradation investigation, the worst stress condition selection and failure mechanism are discussed and then the reasonable stress condition is proposed in this paper.
Keywords
MOSFET; failure analysis; hot carriers; semiconductor device reliability; stress effects; electrical characteristic; failure mechanism; high voltage LDMOSFET; hot carrier degradation; hot carrier reliability; thick gate oxide LDMOSFET; worst stress condition selection; Degradation; Hot carriers; Human computer interaction; Logic gates; Stress; Substrates; Voltage measurement;
fLanguage
English
Publisher
ieee
Conference_Titel
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location
Suzhou
ISSN
1946-1542
Print_ISBN
978-1-4799-1241-4
Type
conf
DOI
10.1109/IPFA.2013.6599255
Filename
6599255
Link To Document