Title :
Visualization of crystalline defects in silicon, a cause of electrical leakage in semiconductor devices
Author :
Chow, S.Y. ; Lee, Stephanie L. ; Lim, K.Y. ; Khoo, B.S. ; Fu, Chuancheng ; Li, X.M.
Author_Institution :
WinTech Nano-Technol. Services Pte. Ltd., Singapore, Singapore
Abstract :
Detection of electrical leakage in semiconductor devices indicates presence of electrical paths between junctions of p-doped and n-doped silicon, if no other physical abnormality is observed. This paper describes the use of advanced failure analysis tools to precisely locate and visualize crystalline defects in silicon that have caused electrical failure.
Keywords :
elemental semiconductors; failure analysis; semiconductor device reliability; silicon; Si; crystalline defect visualization; electrical leakage detection; n-doped silicon; p-doped silicon; physical abnormality; semiconductor devices; Decision support systems; Failure analysis; Integrated circuits; Semiconductor devices; Silicon; Visualization;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location :
Suzhou
Print_ISBN :
978-1-4799-1241-4
DOI :
10.1109/IPFA.2013.6599256
