DocumentCode
3039662
Title
Deposition of PbO thin films and its X-ray photoconductive properties
Author
Ji, Zhenguo ; Li, Leilei ; Xi, Junhua
Author_Institution
Coll. of Mater. & Environ. Eng., Hangzhou Dianzi Univ., Hangzhou, China
fYear
2011
fDate
26-28 July 2011
Firstpage
5795
Lastpage
5798
Abstract
Lead oxide is a promising candidate for direct conversion of X-ray due to its high X-ray photoconductivity. High resistance lead oxide thin films were fabricated by direct current magnetron sputtering. X-ray diffraction and Atomic force microscope were used to characterize the crystalline structure and surface morphology of the thin films. X-ray photoconductivity was characterized by a homemade X-ray photoconductor measurement system. The effects of oxygen flow rate and annealing temperature on the microstructure and X-ray photoconductivity properties of the PbO thin films were also studied. XRD results showed that the crystal structure of the films dependent on oxygen flow rate and annealing temperature. Moreover, it is found that tetragonal PbO is superiors for X-ray detection than orthorhombic PbO.
Keywords
X-ray diffraction; annealing; atomic force microscopy; crystal structure; lead compounds; photoconductivity; sputter deposition; surface morphology; thin films; PbO; X-ray diffraction; X-ray photoconductivity; annealing temperature; atomic force microscope; crystalline structure; direct current magnetron sputtering; homemade X-ray photoconductor measurement system; microstructure; orthorhombic structure; oxygen flow rate; surface morphology; tetragonal structure; thin film deposition; Annealing; Argon; Lead; Photoconductivity; X-ray imaging; X-ray scattering; AFM; X-ray; X-ray photoconductivity; XRD; dc magnetron sputtering; lead oxide;
fLanguage
English
Publisher
ieee
Conference_Titel
Multimedia Technology (ICMT), 2011 International Conference on
Conference_Location
Hangzhou
Print_ISBN
978-1-61284-771-9
Type
conf
DOI
10.1109/ICMT.2011.6002546
Filename
6002546
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