• DocumentCode
    3039672
  • Title

    Self-rectifying and forming-free unipolar HfOx based-high performance RRAM built by fab-avaialbe materials

  • Author

    Tran, X.A. ; Gao, B. ; Kang, J.F. ; Wu, X. ; Wu, L. ; Fang, Z. ; Wang, Z.R. ; Pey, K.L. ; Yeo, Y.C. ; Du, A.Y. ; Liu, M. ; Nguyen, B.Y. ; Li, M.F. ; Yu, H.Y.

  • Author_Institution
    Sch. of EEE, Nanyang Technol. Univ., Singapore, Singapore
  • fYear
    2011
  • fDate
    5-7 Dec. 2011
  • Abstract
    In this paper, we report a high performance, forming-free and self-rectifying unipolar HfOx based RRAM fabricated by fab-available materials. Highlight of the demonstrated RRAM include 1) CMOS technology friendly materials and process, 2) excellent self-rectifying behavior in LRS (>;103 @ 1 V), 3) forming-free unipolar resistive switching, 4) wide read-out margin for high density cross-point memory devices (number of word-line >;106 for worst case condition).
  • Keywords
    CMOS memory circuits; hafnium compounds; random-access storage; CMOS technology; HfOx; fab-avaialbe material; forming-free unipolar resistive switching; high density cross-point memory device; high performance RRAM; read-out margin; self-rectifying unipolar; Electrodes; Hafnium compounds; Nickel; Resistance; Silicon; Switches; Tin;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2011 IEEE International
  • Conference_Location
    Washington, DC
  • ISSN
    0163-1918
  • Print_ISBN
    978-1-4577-0506-9
  • Electronic_ISBN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.2011.6131648
  • Filename
    6131648
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3039672