DocumentCode :
3039684
Title :
Interconnection technique of ALIVH(R) substrate
Author :
Suzuki, T. ; Tomekawa, S. ; Ogawa, T. ; Andoh, D. ; Tanahashi, M. ; Ishida, T.
Author_Institution :
Device Eng. Dev. Center, Matsushita Electr. Ind. Co. Ltd., Kadoma, Japan
fYear :
2001
fDate :
2001
Firstpage :
23
Lastpage :
28
Abstract :
The unique interconnection using conductive paste of the ALIVH(R) (any layer interstitial via hole) substrate, especially its structure, was studied. Calculations and SEM images suggested the existence of metallic bonding between copper particles and between copper particles and copper foil. By assuming that metallic bonds exist, interconnection resistance variation with temperature could be explained. We also studied a considerable number of factors for obtaining strong interconnection. As a consequence, the compression and the binder system of the conductive paste play important roles in achieving strong interconnection
Keywords :
adhesives; bonds (chemical); conducting polymers; electric resistance; integrated circuit interconnections; integrated circuit packaging; printed circuits; scanning electron microscopy; thermal stability; ALIVH structure; ALIVH substrate; Cu; SEM images; any layer interstitial via hole substrate; conductive paste; conductive paste binder system; conductive paste compression; copper particle bonding; copper particle/copper foil bonding; interconnection; interconnection resistance variation; interconnection technique; metallic bonding; metallic bonds; Bonding; Chip scale packaging; Copper; Dielectric constant; Flowcharts; Integrated circuit interconnections; Manufacturing processes; Substrates; Temperature; Wiring;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Packaging Materials: Processes, Properties and Interfaces, 2001. Proceedings. International Symposium on
Conference_Location :
Braselton, GA
Print_ISBN :
0-930815-64-5
Type :
conf
DOI :
10.1109/ISAOM.2001.916543
Filename :
916543
Link To Document :
بازگشت