DocumentCode :
3039706
Title :
Challenges and opportunities for HfOX based resistive random access memory
Author :
Chen, Y.S. ; Lee, H.Y. ; Chen, P.S. ; Tsai, C.H. ; Gu, P.Y. ; Wu, T.Y. ; Tsai, K.H. ; Sheu, S.S. ; Lin, W.P. ; Lin, C.H. ; Chiu, P.F. ; Chen, W.S. ; Chen, F.T. ; Lien, C. ; Tsai, M.-J.
Author_Institution :
Electron. & Optoelectron. Res. Lab., Ind. Technol. Res. Inst., Hsinchu, Taiwan
fYear :
2011
fDate :
5-7 Dec. 2011
Abstract :
The binary oxide based resistive memories showing superior electrical performances on the resistive switching are reviewed in this paper. The status and challenges of the HfOX based resistive device with excellent memory properties are presented. Several future challenges for the filamentary type switching device are also addressed.
Keywords :
hafnium compounds; random-access storage; filamentary type switching device; resistive random access memory; resistive switching; Arrays; Bidirectional control; Hafnium compounds; Reliability; Resistance; Switches; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
ISSN :
0163-1918
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
Type :
conf
DOI :
10.1109/IEDM.2011.6131649
Filename :
6131649
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3039706
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