DocumentCode
3039748
Title
Demonstration of high-density ReRAM ensuring 10-year retention at 85°C based on a newly developed reliability model
Author
Wei, Z. ; Takagi, T. ; Kanzawa, Y. ; Katoh, Y. ; Ninomiya, T. ; Kawai, K. ; Muraoka, S. ; Mitani, S. ; Katayama, K. ; Fujii, S. ; Miyanaga, R. ; Kawashima, Y. ; Mikawa, T. ; Shimakawa, K. ; Aono, K.
Author_Institution
Adv. Devices Dev. Center, Panasonic Co., Kyoto, Japan
fYear
2011
fDate
5-7 Dec. 2011
Abstract
A new oxygen diffusion reliability model for a high-density bipolar ReRAM is developed based on hopping conduction in filaments, which allows statistical predication of activation energy. The filament in the active cells is confirmed by EBAC and TEM directly for the first time. With optimized filament size, a 256-kbit ReRAM with long-term retention exceeding 10 years at 85°C is successfully demonstrated.
Keywords
diffusion; hopping conduction; random-access storage; reliability; statistical analysis; EBAC; ReRAM; TEM; activation energy; filaments; hopping conduction; oxygen diffusion; reliability model; resistance random access memory; statistical predication; temperature 85 degC; Arrays; Conductivity; Degradation; Equations; Mathematical model; Reliability; Resistance;
fLanguage
English
Publisher
ieee
Conference_Titel
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location
Washington, DC
ISSN
0163-1918
Print_ISBN
978-1-4577-0506-9
Electronic_ISBN
0163-1918
Type
conf
DOI
10.1109/IEDM.2011.6131650
Filename
6131650
Link To Document