DocumentCode :
3039803
Title :
Analysis of dummy-gate dual-directional SCR (dSCR) device for ESD protection
Author :
Yuan Wang ; Guangyi Lu ; Jian Cao ; Song Jia ; Ganggang Zhang ; Xing Zhang
Author_Institution :
Key Lab. of Microelectron. Devices & Circuits (MoE), Peking Univ., Beijing, China
fYear :
2013
fDate :
15-19 July 2013
Firstpage :
720
Lastpage :
723
Abstract :
A novel dual-directional silicon controlled rectifier (dSCR) device with dummy gate for electrostatic discharge (ESD) protection is presented. Compared with the traditional dSCR, the novel device has the desirable characteristics of dual-directional conduction, a low ESD trigger voltage, an adjustable ESD holding voltage and non-consumption of the extra area.
Keywords :
electrostatic discharge; thyristors; ESD protection; adjustable ESD holding voltage; dSCR device; dual-directional conduction; dummy-gate dual-directional SCR device; electrostatic discharge; low ESD trigger voltage; silicon controlled rectifier; CMOS process; Discharges (electric); Electrostatic discharges; Integrated circuits; Logic gates; Thyristors; Electrostatic discharge (ESD); dual-directional silicon controlled rectifier (dSCR); holding voltage; triggering voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location :
Suzhou
ISSN :
1946-1542
Print_ISBN :
978-1-4799-1241-4
Type :
conf
DOI :
10.1109/IPFA.2013.6599262
Filename :
6599262
Link To Document :
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