Silicon bipolar mixed-signal parameterized-cell array for wireless applications to 4 GHz

A cell-based array is described which is intended primarily for mixed-signal receiver-on-a-chip (ROC) applications. The array is implemented in a silicon bipolar process with peak f/sub T/ and f/sub max/ of 14 GHz and 20 GHz, respectively. The process has two-level Au metal, 2- mu m emitter-base pitch interdigitated devices, polysilicon thin-film resistors, and 2- mu m-thick field oxide for minimal wiring parasitics. The basic RF and digital subsystem blocks available on the array are illustrated. The 1.8*1.8 mm/sup 2/ array is intended primarily for receiver applications up to 4 GHz, but can also implement many transmit functions for systems up to 2 GHz with separate external power amplifiers. An example application for a Global Positioning System satellite receiver is shown by an architecture where most of the RF and phase-locked loop components have been integrated on the array.<>