• DocumentCode
    3039880
  • Title

    Evaluation methodology for random telegraph noise effects in SRAM arrays

  • Author

    Yamaoka, M. ; Miki, H. ; Bansal, A. ; Wu, S. ; Frank, D.J. ; Leobandung, E. ; Torii, K.

  • Author_Institution
    Semicond. Innovation Res. Project, Hitachi America Ltd., Yorktown Heights, NY, USA
  • fYear
    2011
  • fDate
    5-7 Dec. 2011
  • Abstract
    We propose a novel method to evaluate the impact of RTN on SRAM, and have demonstrated and proved the RTN effects are indeed present in SRAM by both simulation and experiments. Our results also determine the necessary voltage guard band to prevent SRAM yield loss.
  • Keywords
    SRAM chips; RTN effect; SRAM array; SRAM yield loss; evaluation methodology; random telegraph noise effect; voltage guard band; FETs; Noise; Probability; Random access memory; Stability analysis; Time measurement; Voltage measurement;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Electron Devices Meeting (IEDM), 2011 IEEE International
  • Conference_Location
    Washington, DC
  • ISSN
    0163-1918
  • Print_ISBN
    978-1-4577-0506-9
  • Electronic_ISBN
    0163-1918
  • Type

    conf

  • DOI
    10.1109/IEDM.2011.6131656
  • Filename
    6131656
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3039880