Title :
Evaluation methodology for random telegraph noise effects in SRAM arrays
Author :
Yamaoka, M. ; Miki, H. ; Bansal, A. ; Wu, S. ; Frank, D.J. ; Leobandung, E. ; Torii, K.
Author_Institution :
Semicond. Innovation Res. Project, Hitachi America Ltd., Yorktown Heights, NY, USA
Abstract :
We propose a novel method to evaluate the impact of RTN on SRAM, and have demonstrated and proved the RTN effects are indeed present in SRAM by both simulation and experiments. Our results also determine the necessary voltage guard band to prevent SRAM yield loss.
Keywords :
SRAM chips; RTN effect; SRAM array; SRAM yield loss; evaluation methodology; random telegraph noise effect; voltage guard band; FETs; Noise; Probability; Random access memory; Stability analysis; Time measurement; Voltage measurement;
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2011.6131656
