Title :
Geometric effect on InAs/GaAs quantum dot lasers analyzed with the aid of EDX mapping
Author :
Rui Wang ; Kian Seng Yee ; Phua, Reese
Author_Institution :
Bruker Nano Analytics Singapore, Singapore, Singapore
Abstract :
The light-output-current characteristics and temperature stability of quantum dot (QD) lasers with different ridge heights were analyzed with the aid of energy dispersive X-ray (EDX) elementary mapping. The results show that the performance of QD laser with shallow ridge decays due to the lateral carrier spreading.
Keywords :
III-V semiconductors; X-ray chemical analysis; gallium arsenide; indium compounds; quantum dot lasers; EDX elementary mapping; InAs-GaAs; QD lasers; energy dispersive X-ray elementary mapping; geometric effect; lateral carrier spreading; light-output-current characteristics; quantum dot lasers; ridge decays; ridge height; temperature stability; Gallium arsenide; Laser stability; Quantum dot lasers; Temperature; Temperature dependence; Waveguide lasers;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location :
Suzhou
Print_ISBN :
978-1-4799-1241-4
DOI :
10.1109/IPFA.2013.6599270
