Title :
0.5 V Supply Voltage Operation of In0.65Ga0.35As/GaAs0.4Sb0.6 Tunnel FET
Author :
Rajamohanan, Bijesh ; Pandey, Rashmi ; Chobpattana, Varistha ; Vaz, C. ; Gundlach, David ; Cheung, K.P. ; Suehle, John ; Stemmer, Susanne ; Datta, Soupayan
Author_Institution :
Pennsylvania State Univ., University Park, PA, USA
Abstract :
In this letter, we demonstrate using fast current-voltage measurements, low switching slope of 64 mV/decade over a drain current range between 10-3 and 2 × 10-2 μA/μm in staggered-gap In0.65Ga0.35As/GaAs0.4Sb0.6 tunneling field-effect transistors (TFETs) at VDS = 0.5 V. This is achieved through a combination of low damage mesa sidewall etch and improvement in electrical quality of the high-κ gate-stack. Benchmarking our results against experimentally demonstrated TFETs, we conclude that, the staggered-gap TFETs are capable of achieving simultaneously high drive current and low switching slope.
Keywords :
III-V semiconductors; electric current measurement; field effect transistors; gallium arsenide; high-k dielectric thin films; indium compounds; tunnel transistors; voltage measurement; wide band gap semiconductors; In0.65Ga0.35As-GaAs0.4Sb0.6; drive current; electrical quality; fast current-voltage measurements; high-κ gate-stack; low damage mesa sidewall etch; staggered-gap TFET; switching slope; tunneling field-effect transistors; voltage 0.5 V; Hafnium compounds; Logic gates; Nickel; Silicon; Switches; Transistors; Tunneling; III-V; Steep Switching Slope; Tunnel FET; steep switching slope; tunnel FET;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2014.2368147
