Title :
Using strain to increase the reliability of scaled spin MOSFETs
Author :
Osintsev, Dmitri ; Sverdlov, Viktor ; Makarov, A. ; Selberherr, Siegfried
Author_Institution :
Inst. for Microelectron., Tech. Univ. Wien, Vienna, Austria
Abstract :
We investigate the surface roughness induced spin relaxation in scaled spin MOSFETs. We show that the spin-flip hot spots characterized by strong spin relaxation appear in thin MOSFET channel. Strain can efficiently move these hot spots outside of the states occupied by carriers, resulting in a substantial increase of the spin lifetime.
Keywords :
MOSFET; integrated circuit reliability; silicon-on-insulator; surface roughness; scaled spin MOSFET reliability; spin lifetime; spin-flip hot spots; strain; surface roughness induced spin relaxation; thin MOSFET channel; ultra-scaled SOI MOSFET; DVD; Decision support systems; Failure analysis; Integrated circuits; phonon relaxation; shear strain; surface-roughness relaxation; ultra-scaled SOI MOSFETs;
Conference_Titel :
Physical and Failure Analysis of Integrated Circuits (IPFA), 2013 20th IEEE International Symposium on the
Conference_Location :
Suzhou
Print_ISBN :
978-1-4799-1241-4
DOI :
10.1109/IPFA.2013.6599272
