Charge-induced ferromagnetism in two-carbon cluster silicon

Author

Shieh, T.-H. ; Chang, H.-C. ; Ting, H.-W. ; Hung, K.M. ; Li, J.-L. ; Hsu, Y.-H.

Author_Institution

Dept. of Electron. Eng., Kun Shan Univ., Tainan, Taiwan

fYear

2011

fDate

26-28 July 2011

Firstpage

6267

Lastpage

6268

Abstract

This paper presents the first-principles study of two carbon clusters in silicon matrix with 64-atom supercell. The band structure and net spin density of states indicate that the system with neutral charge is non-magnetic, but ferromagnetic as the system is charging with one electron or one hole. This phenomenon can be applied to design and fabricate Si-base spintronic MOS, non-volatile magnetic memory and other Si base spintronic devices where the field-controllable ferromagnetism is important.

Keywords

ab initio calculations; band structure; carbon; electronic density of states; ferromagnetic materials; silicon; spin density waves; 64-atom supercell; Si; band structure; charge-induced ferromagnetism; field-controllable ferromagnetism; first-principles study; nonvolatile magnetic memory; silicon matrix; spin density of states; spintronic MOS; spintronic devices; two-carbon cluster silicon; Carbon; Charge carrier processes; Force; Impurities; Magnetic memory; Magnetoelectronics; Silicon; Carbon cluster; MOS; Si-base; spintronics;

fLanguage

English

Publisher

ieee

Conference_Titel

Multimedia Technology (ICMT), 2011 International Conference on

Conference_Location

Hangzhou

Print_ISBN

978-1-61284-771-9

Type

conf

DOI

10.1109/ICMT.2011.6002568

Filename

6002568