DocumentCode :
3040105
Title :
Demonstration of MOSFET-like on-current performance in arsenide/antimonide tunnel FETs with staggered hetero-junctions for 300mV logic applications
Author :
Mohata, D.K. ; Bijesh, R. ; Mujumdar, S. ; Eaton, C. ; Engel-Herbert, R. ; Mayer, T. ; Narayanan, V. ; Fastenau, J.M. ; Loubychev, D. ; Liu, A.K. ; Datta, S.
Author_Institution :
Dept. of Electr. Eng., Pennsylvania State Univ., University Park, PA, USA
fYear :
2011
fDate :
5-7 Dec. 2011
Abstract :
Type II arsenide/antimonide compound semiconductor with highly staggered GaAs0.35Sb0.65/In0.7Ga0.3As hetero-junction is used to demonstrate hetero tunnel FET (TFET) with record high drive currents (ION) of 190μA/μm and 100μA/μm at VDS=0.75V and 0.3V, respectively (LG=150nm). InxGa1-xAs (x=0.53, 0.7) homo-junction TFETs and GaAs0.5Sb0.5/In0.53Ga0.47As hetero TFET with moderate stagger are also fabricated with the same process flow for benchmarking. Measured and simulated TFET performance is benchmarked with 40nm strained Si MOS-FETs for 300mV logic applications.
Keywords :
MOSFET; elemental semiconductors; gallium arsenide; indium compounds; logic circuits; silicon; tunnel transistors; GaAs0.35Sb0.65-In0.7Ga0.3As; GaAs0.5Sb0.5-In0.53Ga0.47As; MOSFET; MOSFET-like on-current performance; Si; heteroTFET; heterotunnel FET; homojunction TFET; logic application; size 40 nm; staggered heterojunction; voltage 0.75 V; voltage 300 mV; Current measurement; FETs; Indium phosphide; Lattices; Logic gates; Silicon; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
ISSN :
0163-1918
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
Type :
conf
DOI :
10.1109/IEDM.2011.6131665
Filename :
6131665
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3040105
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