Fabrication, characterization, and physics of III–V heterojunction tunneling Field Effect Transistors (H-TFET) for steep sub-threshold swing

This work demonstrates the steepest subthreshold swing (SS <; 60mV/decade) ever reported in a III-V Tunneling Field Effect Transistor (TFET) by using thin gate oxide, heterojunction engineering and high source doping. Owing to a lower source-to-channel tunnel barrier height, heterojunction III-V TFETs demonstrate steeper subthreshold swing (SS) at a given drain current (I_D) and improved drive current compared to the homojunction III-V TFETs. Electrical oxide thickness (EOT) scaling and increased source doping in tandem with tunnel barrier height reduction are shown to greatly improve the SS of the III-V TFETs and increase I_D by more than 20X.