Analysis of dopant diffusion and defects in SiGe channel Quantum Well for Laser annealed device using an atomistic kinetic Monte Carlo approach

Author

Noda, T. ; Witters, L. ; Mitard, J. ; Rosseel, E. ; Hellings, G. ; Vrancken, C. ; Bender, H. ; Hoffmann, T.Y. ; Horiguchi, N. ; Vandervorst, W.

Author_Institution

Panasonic Corp., Nagaokakyo, Japan

fYear

2011

fDate

5-7 Dec. 2011

Abstract

An analysis of dopant diffusion and defects in SiGe-channel Quantum Well (QW) with Laser annealing using an atomistic KMC approach are shown. Thin SiGe layer with high Ge content for SiGe-channel QW has an impact on implantation damage and Boron-Transient Enhanced Diffusion (TED) suppression, and defect evolution. KMC shows that As-pocket in SiGe-channel pFET shows enhanced diffusion toward SiGe-channel and higher As concentration in SiGe-channel. The difference of pocket diffusion is one of possible reason for the higher Vth mismatch for SiGe-channel with As pocket than for Si-channel.

Keywords

Ge-Si alloys; Monte Carlo methods; diffusion; field effect transistors; laser beam annealing; quantum well devices; semiconductor doping; QW; SiGe; atomistic KMC approach; atomistic kinetic Monte Carlo approach; boron-transient enhanced diffusion; channel quantum well; dopant diffusion; laser annealed device; pFET; Annealing; Atomic beams; Implants; Lasers; Resistance; Silicon; Silicon germanium;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices Meeting (IEDM), 2011 IEEE International

Conference_Location

Washington, DC

ISSN

0163-1918

Print_ISBN

978-1-4577-0506-9

Electronic_ISBN

0163-1918

Type

conf

DOI

10.1109/IEDM.2011.6131669

Filename

6131669