Author :
Yamaguchi, S. ; Witters, L. ; Mitard, J. ; Eneman, Geert ; Hellings, Geert ; Fukuda, M. ; Hikavyy, A. ; Loo, R. ; Veloso, A. ; Crabbe, Y. ; Rohr, E. ; Favia, P. ; Bender, H. ; Takeoka, S. ; Vellianitis, G. ; Wang, W. -E ; Ragnarsson, L.A. ; De Meyer, K. ;
Abstract :
In this work, we report high performance Si.45Ge.55 Implant Free Quantum Well (IFQW) pFET with high drive current of 1.28mA/um at Ioff=160nA/um at channel length/width of 30nm/0.16um (Vdd=-1V). This is enabled by 1) low temperature process which maintains the integrity of the high mobility of Si.45Ge.55 channel, 2) embedded SiGe (eSiGe) stressor which is fully compatible with SiGe channel and 3) relaxation of unwanted transversal stress at narrow width channel which results in a significant mobility boost (1.9× mobility improvement from active width of 10um to 0.1um).
Keywords :
elemental semiconductors; germanium; quantum wells; relaxation; semiconductor devices; silicon; SiGe; eSiGe stressor; high performance implant free quantum well FET; low temperature process; narrow width channel; transversal strain relaxation; unwanted transversal stress; Implants; Performance evaluation; Silicon; Silicon germanium; Strain; Stress; Very large scale integration;
