Title :
A new Ge2Sb2Te5 (GST) liner stressor featuring stress enhancement due to amorphous-crystalline phase change for sub-20 nm p-channel FinFETs
Author :
Ding, Yinjie ; Cheng, Ran ; Koh, Shao-Ming ; Liu, Bin ; Gyanathan, Ashvini ; Zhou, Qian ; Tong, Yi ; Lim, Phyllis Shi-Ya ; Han, Genquan ; Yeo, Yee-Chia
Author_Institution :
Dept. of Electr. & Comput. Eng., Nat. Univ. of Singapore (NUS), Singapore, Singapore
Abstract :
We report the first demonstration of a novel Ge2Sb2Te5 (GST) liner stressor which can be shrunk or contracted (in volume) during phase-change to realize performance enhancement in p-channel FinFETs. FinFETs with ultra-scaled gate length down to ~4.5 nm were used. Amorphous GST (α-GST) liner has intrinsic stress that increases the p-FinFET drive current as compared to unstrained control devices. Further, when the a-GST changes phase to crystalline GST (c-GST), the GST liner contracts, leading to very high channel stress and drive current enhancement.
Keywords :
MOSFET; crystallisation; GST liner stressor; Ge2Sb2Te5; amorphous-crystalline phase change; drive current enhancement; p-FinFET drive current; p-channel FinFET; performance enhancement; stress enhancement; unstrained control devices; Compressive stress; Crystallization; FinFETs; Logic gates; Silicon; Strain;
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2011.6131678
