Title :
300mm FinFET results utilizing conformal, damage free, ultra shallow junctions (Xj∼5nm) formed with molecular monolayer doping technique
Author :
Ang, K.-W. ; Barnett, J. ; Loh, W.Y. ; Huang, J. ; Min, B.-G. ; Hung, P.Y. ; Ok, I. ; Yum, J.H. ; Bersuker, G. ; Rodgers, M. ; Kaushik, V. ; Gausepohl, S. ; Hobbs, C. ; Kirsch, P.D. ; Jammy, R.
Author_Institution :
SEMATECH, Albany, NY, USA
Abstract :
We demonstrate for the first time, a 20nm FinFET using a new, conformal, and damage-free monolayer doping technique. Unlike conventional ion-implantation, this approach makes use of a dopant-containing precursor to uniformly assemble a monolayer of covalently bonded dopants to enable an ultra-shallow (Xj~5nm) and abrupt (0.6nm/dec) junction formation around a high aspect ratio fin structure, which overcomes the possible FinFET pitch scaling limitations of traditional doping techniques. FinFETs featuring MLD junctions were successfully demonstrated with good electrostatics control down to a gate length of ~40nm. With further scaling of the fin width, sub-threshold swing and threshold voltage roll-off can be further improved. This low damage and conformal doping is a promising technique to address key FinFET scaling issues associated with parasitic series resistance and short channel control for the 15nm node and beyond.
Keywords :
MOSFET; electric resistance; electrostatics; monolayers; semiconductor doping; FinFET; MLD junctions; conformal monolayer doping; covalently bonded dopants; damage-free monolayer doping; dopant-containing precursor; electrostatics control; molecular monolayer doping; parasitic series resistance; short channel control; size 20 nm; size 300 mm; ultra shallow junctions; Annealing; Doping; FinFETs; Junctions; Logic gates; Resistance; Silicides;
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
DOI :
10.1109/IEDM.2011.6131679