Self-organization of highly ordered mosaic structure of porous silicon at long anodic etching of p-type silicon in the electrolyte with internal current source

Self-organization of highly ordered mosaic structure of porous Si at long anodic etching of p-Si (100) in electrolyte with internal source of the current is observed. Sizes of the nanocrystallites islets of porous Si, the period of their location and self-organization of the mosaic structure of porous silicon are defined by the effect of forces of elastically-deformation, defect-deformation and capillary-fluctuation that exist at the interface of electrolyte/porous Si/c-Si/ in process of pores formation. Process of spontaneous formation of mosaic structure por-Si has place in results from relaxation of the elastically-strained layer of porous surface and effect of capillary-fluctuation forces. Conditions of development of these forces depend on the self-coordinated parameters of etching of interface heterophase of electrochemical system the electrolyte/porous Si/c-Si/ and parameters of electrodes and electrochemical cell.