DocumentCode :
3040496
Title :
Bifacial CIGS (11% efficiency)/Si solar cells by Cd-free and sodium-free green process integrated with CIGS TFTs
Author :
Hsiao, Yu-Jen ; Hsueh, Ting-Jen ; Shieh, Jia-Min ; Yeh, Yu-Ming ; Wang, Chien-Chih ; Dai, Bau-Tong ; Hsu, Wen-Wei ; Lin, Jing-Yi ; Shen, Chang-Hong ; Liu, C.W. ; Hu, Chenming ; Yang, Fu-Liang
Author_Institution :
Nat. Nano Device Labs., Hsinchu, Taiwan
fYear :
2011
fDate :
5-7 Dec. 2011
Abstract :
CuInGaSe2 (CIGS) thin-film has successfully grown at low temperature 400°C for bifacial solar cells and TFTs without degrading the silicon solar cell on the other side. The efficiency of CIGS solar cells reached 6.3% and 11% at 400 and 500°C, respectively, by sodium-free and Cd-free (n-type ZnS buffer layer used) green technologies. Texturing technique has been introduced here on Si not only to relieve the sodium-free impact on CIGS-crystallization but also to enhance the adhesion between CIGS solar cells and underneath substrate. CIGS TFTs are reported first time and revealed a record-high hole-mobility of 0.22 cm2/V-s. Hybrid CIGS solar cells/TFTs are uniformly formed on 6" wafers, simultaneously powered with silicon solar cells.
Keywords :
copper compounds; elemental semiconductors; indium compounds; silicon; solar cells; ternary semiconductors; thin film devices; CIGS-crystallization; Cd-free green process; CuInGaSe2; Si; bifacial CIGS TFT; bifacial solar cell; hybrid CIGS solar cells; silicon solar cell; sodium-free green process; temperature 400 degC to 500 degC; texturing technique; underneath substrate; Etching; Films; Photovoltaic cells; Photovoltaic systems; Silicon; Substrates; Thin film transistors;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices Meeting (IEDM), 2011 IEEE International
Conference_Location :
Washington, DC
ISSN :
0163-1918
Print_ISBN :
978-1-4577-0506-9
Electronic_ISBN :
0163-1918
Type :
conf
DOI :
10.1109/IEDM.2011.6131686
Filename :
6131686
Link To Document :
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