Title :
Development of GaN HEMT based High Power High Efficiency Distributed Power Amplifier for Military Applications
Author :
Xie, Chenggang ; Pavio, Anthony
Author_Institution :
Government System, Rockwell Collins, Inc., Scottsdale, AZ 85251, USA
Abstract :
Implementing wide bandgap GaN HEMT device into broadband distributed power amplifier creates a tremendous opportunity for RF designers to develop high power high efficiency very broadband power amplifiers for military applications. Several prototypes of 10-40 W GaN based distributed power amplifiers, including MMIC distributed PA, are currently under the development at Rockwell Collins, Inc. In this paper, we will discuss the results of a 10 W distributed power amplifier with the maximum power output of more than 40 dBm and a power-added efficiency of 30-70% over the bandwidth of 20-2000 MHz.
Keywords :
Broadband amplifiers; Distributed amplifiers; Gallium nitride; HEMTs; High power amplifiers; Photonic band gap; Power amplifiers; Prototypes; Radio frequency; Radiofrequency amplifiers;
Conference_Titel :
Military Communications Conference, 2007. MILCOM 2007. IEEE
Conference_Location :
Orlando, FL, USA
Print_ISBN :
978-1-4244-1513-7
Electronic_ISBN :
978-1-4244-1513-7
DOI :
10.1109/MILCOM.2007.4455083
