Development of GaN HEMT based High Power High Efficiency Distributed Power Amplifier for Military Applications

Implementing wide bandgap GaN HEMT device into broadband distributed power amplifier creates a tremendous opportunity for RF designers to develop high power high efficiency very broadband power amplifiers for military applications. Several prototypes of 10-40 W GaN based distributed power amplifiers, including MMIC distributed PA, are currently under the development at Rockwell Collins, Inc. In this paper, we will discuss the results of a 10 W distributed power amplifier with the maximum power output of more than 40 dBm and a power-added efficiency of 30-70% over the bandwidth of 20-2000 MHz.