DocumentCode :
3040872
Title :
Impact of wafer surface profile on IC packaging
Author :
Wu, Jim C L ; Iksan, Henry ; Huang, T.J. ; Wu, J.D. ; Lo, Kenny
Author_Institution :
Adv. Semicond. Eng. Inc., Kaohsiung, Taiwan
fYear :
2001
fDate :
2001
Firstpage :
405
Lastpage :
412
Abstract :
In this paper, delamination occurring in a plastic quad flat package (PQFP) had been found after the molding process. From preliminary observation, the wafer surface profile is found to be different from the others by atomic force microscopy (AFM) analysis, e.g. the pitch and trench of the local die surface. A stress simulation was performed to characterize the interaction between the molding compound formula design, molding process and wafer surface topography. The results show that the wafer topography does have a significant impact on the in-situ molding process. Aside from simulation, Fourier transform infrared spectrometry (FTIR) was used to characterize the uniformity of top layer passivation. The result showed that the uniformity of deposited passivation was not quite homogeneous as compared to a well-adhered area, which might cause insufficient adhesion which is contributed to by low density chemical bonding in the interface. Therefore, wafer surface topography and its chemistry do have a significant impact on IC packaging
Keywords :
Fourier transform spectra; adhesion; atomic force microscopy; circuit simulation; delamination; integrated circuit modelling; integrated circuit packaging; moulding; passivation; plastic packaging; stress analysis; surface chemistry; surface topography; thermal expansion; FTIR; Fourier transform infrared spectrometry; IC packaging; PQFP; adhesion; atomic force microscopy; delamination; in-situ molding process; local die surface pitch; local die surface trench; low density interface chemical bonding; molding compound formula design; molding process; passivation; plastic quad flat package; simulation; stress simulation; top layer passivation uniformity; wafer surface chemistry; wafer surface profile; wafer surface topography; well-adhered area; Atomic force microscopy; Delamination; Fourier transforms; Infrared spectra; Integrated circuit packaging; Passivation; Plastic packaging; Process design; Stress; Surface topography;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Advanced Packaging Materials: Processes, Properties and Interfaces, 2001. Proceedings. International Symposium on
Conference_Location :
Braselton, GA
Print_ISBN :
0-930815-64-5
Type :
conf
DOI :
10.1109/ISAOM.2001.916610
Filename :
916610
Link To Document :
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