• DocumentCode
    3040872
  • Title

    Impact of wafer surface profile on IC packaging

  • Author

    Wu, Jim C L ; Iksan, Henry ; Huang, T.J. ; Wu, J.D. ; Lo, Kenny

  • Author_Institution
    Adv. Semicond. Eng. Inc., Kaohsiung, Taiwan
  • fYear
    2001
  • fDate
    2001
  • Firstpage
    405
  • Lastpage
    412
  • Abstract
    In this paper, delamination occurring in a plastic quad flat package (PQFP) had been found after the molding process. From preliminary observation, the wafer surface profile is found to be different from the others by atomic force microscopy (AFM) analysis, e.g. the pitch and trench of the local die surface. A stress simulation was performed to characterize the interaction between the molding compound formula design, molding process and wafer surface topography. The results show that the wafer topography does have a significant impact on the in-situ molding process. Aside from simulation, Fourier transform infrared spectrometry (FTIR) was used to characterize the uniformity of top layer passivation. The result showed that the uniformity of deposited passivation was not quite homogeneous as compared to a well-adhered area, which might cause insufficient adhesion which is contributed to by low density chemical bonding in the interface. Therefore, wafer surface topography and its chemistry do have a significant impact on IC packaging
  • Keywords
    Fourier transform spectra; adhesion; atomic force microscopy; circuit simulation; delamination; integrated circuit modelling; integrated circuit packaging; moulding; passivation; plastic packaging; stress analysis; surface chemistry; surface topography; thermal expansion; FTIR; Fourier transform infrared spectrometry; IC packaging; PQFP; adhesion; atomic force microscopy; delamination; in-situ molding process; local die surface pitch; local die surface trench; low density interface chemical bonding; molding compound formula design; molding process; passivation; plastic quad flat package; simulation; stress simulation; top layer passivation uniformity; wafer surface chemistry; wafer surface profile; wafer surface topography; well-adhered area; Atomic force microscopy; Delamination; Fourier transforms; Infrared spectra; Integrated circuit packaging; Passivation; Plastic packaging; Process design; Stress; Surface topography;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Advanced Packaging Materials: Processes, Properties and Interfaces, 2001. Proceedings. International Symposium on
  • Conference_Location
    Braselton, GA
  • Print_ISBN
    0-930815-64-5
  • Type

    conf

  • DOI
    10.1109/ISAOM.2001.916610
  • Filename
    916610