Title :
Valence-band offset in ultra-thin HfO2 film on GaAs
Author :
Shieh, T.-H. ; Hsue, Z.-W. ; Ting, H.-W. ; Hung, K.-M. ; Hou, B.-Y. ; Li, J.L. ; Nin, C. -H ; Tsai, Y.-C.
Author_Institution :
Dept. of Electron. Eng., Kun Shan Univ., Tainan, Taiwan
Abstract :
This paper presents the first-principles study of an ultra-thin (monoclinic-) cubic-HfO2 layer on GaAs substrate. The heavy stress in hafnia layer significantly causes the structure deformation and results in a charge transfer and superstoichiometric HfOy. The valence-band offset of the structure c-HfO2/GaAs is increased, while that of m-HfO2/GaAs is decreased after structure relaxation. These characteristics should significantly affect the properties of CMOS devices made from an ultra-thin HfO2 dielectric film stacked on GaAs channel.
Keywords :
III-V semiconductors; MOSFET; ab initio calculations; charge exchange; dielectric thin films; gallium arsenide; hafnium compounds; stoichiometry; valence bands; CMOS devices; GaAs; HfO2-GaAs; charge transfer; cubic structure; dielectric film; first-principles study; hafnia layer; monoclinic structure; structure deformation; superstoichiometry; ultrathin film; valence-band offset; Atomic layer deposition; Atomic measurements; CMOS integrated circuits; Charge transfer; Films; Gallium arsenide; Hafnium compounds; GaAs; HfO2; first principles;
Conference_Titel :
Multimedia Technology (ICMT), 2011 International Conference on
Conference_Location :
Hangzhou
Print_ISBN :
978-1-61284-771-9
DOI :
10.1109/ICMT.2011.6002605
