Valence-band offset in ultra-thin HfO2 film on GaAs

Author

Shieh, T.-H. ; Hsue, Z.-W. ; Ting, H.-W. ; Hung, K.-M. ; Hou, B.-Y. ; Li, J.L. ; Nin, C. -H ; Tsai, Y.-C.

Author_Institution

Dept. of Electron. Eng., Kun Shan Univ., Tainan, Taiwan

fYear

2011

fDate

26-28 July 2011

Firstpage

6658

Lastpage

6659

Abstract

This paper presents the first-principles study of an ultra-thin (monoclinic-) cubic-HfO₂ layer on GaAs substrate. The heavy stress in hafnia layer significantly causes the structure deformation and results in a charge transfer and superstoichiometric HfOy. The valence-band offset of the structure c-HfO₂/GaAs is increased, while that of m-HfO₂/GaAs is decreased after structure relaxation. These characteristics should significantly affect the properties of CMOS devices made from an ultra-thin HfO₂ dielectric film stacked on GaAs channel.

Keywords

III-V semiconductors; MOSFET; ab initio calculations; charge exchange; dielectric thin films; gallium arsenide; hafnium compounds; stoichiometry; valence bands; CMOS devices; GaAs; HfO₂-GaAs; charge transfer; cubic structure; dielectric film; first-principles study; hafnia layer; monoclinic structure; structure deformation; superstoichiometry; ultrathin film; valence-band offset; Atomic layer deposition; Atomic measurements; CMOS integrated circuits; Charge transfer; Films; Gallium arsenide; Hafnium compounds; GaAs; HfO2; first principles;

fLanguage

English

Publisher

ieee

Conference_Titel

Multimedia Technology (ICMT), 2011 International Conference on

Conference_Location

Hangzhou

Print_ISBN

978-1-61284-771-9

Type

conf

DOI

10.1109/ICMT.2011.6002605

Filename

6002605