Title :
High permittivity gate insulators TiO2 and ZrO2
Author :
He, B. ; Hoilien, N. ; Smith, R. ; Ma, T. ; Taylor, C. ; Omer, I. St ; Campbell, S.A. ; Gladfelter, W.L. ; Gribelyuk, M. ; Buchanan, D.
Author_Institution :
Dept. of Electr. & Comput. Eng., Minnesota Univ., Minneapolis, MN, USA
Abstract :
Polycrystalline films of TiO2 and ZrO2 have been deposited from their respective tetranitrato precursors. Film microstructure has been examined. The leakage current depends on the process conditions, and particularly on a post deposition hydrogen anneal. An interfacial layer leads to a lower than expected capacitance. This layer is believed to be due to silicon oxidation in ZrO2 and silicate formation in TiO2
Keywords :
annealing; capacitance; chemical vapour deposition; crystal microstructure; dielectric thin films; leakage currents; oxidation; permittivity; titanium compounds; zirconium compounds; CVD; TiO2; ZrO2; capacitance; film microstructure; high permittivity gate insulators; leakage current; polycrystalline films; post deposition hydrogen annealing; process conditions; silicate formation; silicon oxidation; tetranitrato precursors; Capacitance; Dielectric thin films; Dielectrics and electrical insulation; Leakage current; Manufacturing; Permittivity; Photonic band gap; Semiconductor films; Silicon; Titanium;
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 1999. Proceedings of the Thirteenth Biennial
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-5240-8
DOI :
10.1109/UGIM.1999.782817
