Direct measurement of the soft-error immunity on the DRAM well structure by using the nuclear microprobe

Author

Ohno, Y. ; Kishimoto, T. ; Sonoda, Ken´ichiro ; Sayama, H. ; Komori, S. ; Kinomura, A. ; Horino, Y. ; Fujii, K. ; Nishimura, T. ; Takai, M. ; Miyoshi, H.

Author_Institution

ULSI Lab., Mitsubishi Electr. Corp., Hyogo, Japan

fYear

1995

fDate

6-8 June 1995

Firstpage

145

Lastpage

149

Abstract

The soft-error evaluation method using the nuclear microprobe has been demonstrated. This method realized the quantitative study of the charge collection which induces the soft-error event. The retrograde well structure with the double buried p/sup +/ layers was found to be more effective for the soft-error immunity of DRAMs, as compared with the conventional well structure on the p/sup -/epi/p/sup +/ substrate. These results were well proved by the simulation results. The evaluation method using high-energy nuclear microprobe gives the principle to optimize the well structure for the soft-error immunity of advanced DRAMs.

Keywords

DRAM chips; circuit optimisation; integrated circuit testing; proton effects; DRAM well structure; charge collection; double buried p/sup +/ layers; nuclear microprobe; retrograde well structure; soft-error event; soft-error immunity; well structure optimisation; Area measurement; Capacitors; Current measurement; Electric variables measurement; Ion implantation; Nuclear measurements; Power measurement; Protons; Random access memory; Virtual private networks;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1995. Digest of Technical Papers. 1995 Symposium on

Conference_Location

Kyoto, Japan

Print_ISBN

0-7803-2602-4

Type

conf

DOI

10.1109/VLSIT.1995.520899

Filename

520899