Title :
Selective zinc diffusion for GaAs0.6P0.4 LED arrays
Author :
Lawrence, David J. ; Heineman, Dawn L.
Author_Institution :
Integrated Sci. & Technol. Program, James Madison Univ., Harrisonburg, VA, USA
Abstract :
The fabrication of linear red LED arrays in an undergraduate laboratory is described. Isolated p+-n junctions are formed by selective zinc diffusion into n-type GaAs0.6P0.4 wafers. The performance of several thin film diffusion mask materials is compared. The investigated mask materials include phosphosilicate glass, silicon nitride, and silicon. Enhanced lateral diffusion of zinc under the mask along the SiO2 -GaAs0.6P0.4 interface is observed for all of these mask materials. Phosphosilicate glass films provide the best results, however, even in this case, the lateral diffusion is nearly nine times the diffusion depth. Electrical and optical characteristics of the resulting LED arrays are presented
Keywords :
III-V semiconductors; diffusion; gallium arsenide; light emitting diodes; optical arrays; zinc; GaAs0.6P0.4 LED array; GaAs0.6P0.4:Zn; SiO2-GaAs0.6P0.4 interface; fabrication; lateral diffusion; p+-n junction; phosphosilicate glass; selective zinc diffusion; silicon; silicon nitride; thin film diffusion mask; Fabrication; Gallium arsenide; Glass; Laboratories; Light emitting diodes; Optical arrays; Optical films; Silicon; Transistors; Zinc;
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 1999. Proceedings of the Thirteenth Biennial
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-5240-8
DOI :
10.1109/UGIM.1999.782828
