Radiation and temperature effects on the operation of microwave active filters

Author

Soliman, F.A.S. ; El-Shabat, I.A. ; Al-Kabbani, A.S.S. ; Farag, F.M.

Author_Institution

Nucl. Mater. Authority, Cairo, Egypt

fYear

1996

fDate

19-21 Mar 1996

Firstpage

109

Lastpage

120

Abstract

A methodology for computer-simulated design of active microwave filters, either all-or band-pass ones, was previously carried out by the authors. We consider the effects of radiation and temperature on the operation of such filters. In general, gamma-exposure of the GaAs MESFETs up to a total gamma-dose of 80.0 Mrads causes the gain of the filters to decrease. In the ideal cases of both filters the reduction is negligible, but in the optimal cases, the gain reduction is noticeable. Also, when the devices´ temperature increases, from -50 up to 150 °C, the gain is reduced in both cases; ideal and optimal

Keywords

III-V semiconductors; MESFET integrated circuits; active filters; all-pass filters; band-pass filters; circuit CAD; circuit analysis computing; field effect MMIC; gallium arsenide; gamma-ray effects; microwave filters; -50 to 150 degC; 80 Mrad; GaAs; III-V semiconductors; MESFET; MMIC; active microwave filters; all-pass microwave filters; band-pass microwave filters; computer-simulated design; gain; gamma-dose; gamma-exposure; microwave active filter operation; radiation effects; temperature effects; Active filters; Band pass filters; Circuit stability; Gallium arsenide; MESFET circuits; Microwave circuits; Microwave devices; Microwave filters; Temperature dependence; Transconductance;

fLanguage

English

Publisher

ieee

Conference_Titel

Radio Science Conference, 1996. NRSC '96., Thirteenth National

Conference_Location

Cairo

Print_ISBN

0-7803-3656-9

Type

conf

DOI

10.1109/NRSC.1996.551103

Filename

551103