Title :
RF package characterization and modeling
Author :
Khandelwal, P. ; Chinnaswamy, K. ; Shenai, K.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., Illinois Univ., Chicago, IL, USA
Abstract :
This paper presents the characterization and modeling of package parasitics of power MOSFETs used in RF applications. A detailed characterization procedure of electrical and thermal properties of the package is discussed. It is shown that the package limits the performance obtained by the devices in the RF range. Thus the RF package needs to be characterized and modeled accurately for the simulations and optimization of power MOSFET modules in RF applications
Keywords :
power MOSFET; semiconductor device models; semiconductor device packaging; thermal management (packaging); RF applications; RF package characterization; electrical properties; modeling; optimization; package parasitics; power MOSFET modules; power MOSFETs; simulations; thermal properties; Bonding; Flanges; Heat sinks; Heat transfer; Immune system; MOSFET circuits; Packaging; Power MOSFET; Radio frequency; Temperature;
Conference_Titel :
University/Government/Industry Microelectronics Symposium, 1999. Proceedings of the Thirteenth Biennial
Conference_Location :
Minneapolis, MN
Print_ISBN :
0-7803-5240-8
DOI :
10.1109/UGIM.1999.782849
