DocumentCode
3041444
Title
RF package characterization and modeling
Author
Khandelwal, P. ; Chinnaswamy, K. ; Shenai, K.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., Illinois Univ., Chicago, IL, USA
fYear
1999
fDate
1999
Firstpage
182
Lastpage
185
Abstract
This paper presents the characterization and modeling of package parasitics of power MOSFETs used in RF applications. A detailed characterization procedure of electrical and thermal properties of the package is discussed. It is shown that the package limits the performance obtained by the devices in the RF range. Thus the RF package needs to be characterized and modeled accurately for the simulations and optimization of power MOSFET modules in RF applications
Keywords
power MOSFET; semiconductor device models; semiconductor device packaging; thermal management (packaging); RF applications; RF package characterization; electrical properties; modeling; optimization; package parasitics; power MOSFET modules; power MOSFETs; simulations; thermal properties; Bonding; Flanges; Heat sinks; Heat transfer; Immune system; MOSFET circuits; Packaging; Power MOSFET; Radio frequency; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
University/Government/Industry Microelectronics Symposium, 1999. Proceedings of the Thirteenth Biennial
Conference_Location
Minneapolis, MN
Print_ISBN
0-7803-5240-8
Type
conf
DOI
10.1109/UGIM.1999.782849
Filename
782849
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