From Resistive Switching Mechanisms in AM4Q8 Mott Insulators to Mott Memories

The application of electrical pulses on Mott insulators AM₄Q₈ (A = Ga, Ge ; M = V, Nb, Ta, Mo; Q = S, Se) induces a new phenomenon of resistive switching (RS). Appearing above threshold electric fields of a few kV/cm, this volatile transition stabilizes into a non volatile RS for higher electric fields. A pulse protocol alternating short multi-pulses of high voltage with long single pulses of low voltage enables to control this reversible RS in crystals and thin films. The resulting cycling performances obtained on GaV₄S₈ miniaturized devices demonstrate the interest of these compounds towards Mott memory applications.