Title :
Effect of Growth Temperature of the Confinement Layer on Cathodoluminescence Properties of GaSb/GaAs Quantum Dot Multilayer Structures
Author :
Drozdowicz-Tomsia, K. ; Goldys, Ewa M. ; Motlan
Author_Institution :
Phys. Dept., Macquarie Univ., North Ryde, NSW
Abstract :
Multilayer GaSb/GaAs quantum dot (QD) structures grown by atmospheric pressure metalorganic chemical deposition (MOCVD) on semi-insulating (SI) GaAs (100) substrates with varying growth temperature of the confinement layers are studied by the cathodoluminescence (CL). Two main features assigned to wetting layer (WL) and quantum dots (QD) are observed in the CL spectra. Their relative positions strongly depend on the growth conditions of the confinement layers
Keywords :
III-V semiconductors; MOCVD; cathodoluminescence; gallium arsenide; optical multilayers; semiconductor growth; semiconductor quantum dots; GaAs substrates; GaSb-GaAs; GaSb/GaAs quantum dot multilayer; MOCVD; atmospheric pressure metalorganic chemical deposition; cathodoluminescence; growth temperature; wetting layer; Atomic force microscopy; Atomic measurements; Force measurement; Gallium arsenide; MOCVD; Nonhomogeneous media; Physics; Quantum dots; Temperature; US Department of Transportation;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2004 Conference on
Conference_Location :
Brisbane, Qld.
Print_ISBN :
0-7803-8820-8
DOI :
10.1109/COMMAD.2004.1577478
