Title :
Comparison of Photocurrent Spectra of InGaAsN QD and InGaAs QW Laser Devices
Author :
Gao, Q. ; Buda, M. ; Tan, H.H. ; Jagadish, C.
Author_Institution :
Dept. of Electron. Mater. Eng., Australian Nat. Univ., Canberra, ACT
Abstract :
An InGaAsN quantum dot (QD) laser structure and a reference InGaAs single quantum well (QW) laser structure were grown on GaAs substrates by metalorganic chemical vapor deposition. A comparison study of photocurrent spectra of these two structures was performed. It was found that InGaAsN QD devices exhibit a lower-energy transition and shows a smaller quantum-confined Stark effect than InGaAs QW devices. Also the wetting layer of InGaAsN QD devices shows a broader absorption peak than the InGaAs QW layer
Keywords :
III-V semiconductors; MOCVD; gallium arsenide; indium compounds; laser transitions; photoemission; quantum confined Stark effect; quantum dot lasers; quantum well lasers; wide band gap semiconductors; GaAs substrates; InGaAs; InGaAs QW laser; InGaAsN; InGaAsN quantum dot laser; lower-energy transition; metalorganic chemical vapor deposition; photocurrent spectra; quantum-confined Stark effect; wetting layer; Absorption; Chemical lasers; Chemical vapor deposition; Gallium arsenide; Indium gallium arsenide; Laser transitions; Photoconductivity; Quantum dot lasers; Quantum well lasers; Stark effect;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2004 Conference on
Conference_Location :
Brisbane, Qld.
Print_ISBN :
0-7803-8820-8
DOI :
10.1109/COMMAD.2004.1577479
