Title :
Conductive channel in ONO formed by controlled dielectric breakdown
Author :
Chiang, S. ; Wang, R. ; Speers, T. ; McCollum, J. ; Hamdy, E. ; Hu, C.
Author_Institution :
Actel Corp., Sunnyvale, CA, USA
Abstract :
Cross-section TEM photos that capture the conductive channel of oxide-nitride-oxide (ONO) films after electric breakdown are discussed. The photos reveal a single crystal or polycrystal channel with a dome-shaped cap depending on the breakdown current. The implications of this structure for electric characteristics is analyzed with a spherical thermal-electric model. When ONO films are used as antifuse on FPGA product, the resistance of the antifuse can be controlled by choosing a sufficiently large programming current level and the resistance remains stable during 1000 h of burn-in at 125 degrees C and 5.75 V. Negligible change in delay time along many different data paths was observed.<>
Keywords :
electric breakdown of solids; insulating thin films; integrated circuit technology; logic arrays; transmission electron microscopy; 1000 h; 125 degC; 5.75 V; FPGA product; TEM; antifuse; burn-in; conductive channel; controlled dielectric breakdown; data paths; delay time; dome-shaped cap; oxide-nitride-oxide films; polycrystal channel; programming current level; spherical thermal-electric model; Capacitors; Cooling; Dielectric breakdown; Electric breakdown; Field programmable gate arrays; Hip; Random access memory; Resistors; Semiconductor films; Silicon;
Conference_Titel :
VLSI Technology, 1992. Digest of Technical Papers. 1992 Symposium on
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-0698-8
DOI :
10.1109/VLSIT.1992.200623
