• DocumentCode
    3041922
  • Title

    Monolithic integration of laser and waveguide using a twin-guide structure with absorption layer

  • Author

    Studenkov, P. ; Gokhale, M. ; Xu, L. ; Dries, J.C. ; Chao, C.P. ; Garbuzov, D. ; Forrest, S.R.

  • Author_Institution
    Dept. of Electr. Eng., Princeton Univ., NJ, USA
  • fYear
    1997
  • fDate
    11-15 May 1997
  • Firstpage
    669
  • Lastpage
    672
  • Abstract
    We demonstrate for the first time the use of absorption layer to achieve mode control in an InP/InGaAsP integrated twin-guide (TG) laser structure. The In0.53Ga0.47As layer eliminates the even mode and makes characteristics of the integrated device insensitive to laser cavity length and structure variations, without degrading performance. A record high coupling efficiency of 45% from the TG laser to the integrated passive waveguide is obtained
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; integrated optics; optical waveguides; semiconductor lasers; 45 percent; In0.53Ga0.47As; InP-InGaAsP; absorption layer; coupling efficiency; mode control; monolithic integration; passive waveguide; twin-guide laser; Absorption; Etching; Indium phosphide; Laser feedback; Laser modes; Monolithic integrated circuits; Optical coupling; Optical waveguides; Photonics; Waveguide lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Indium Phosphide and Related Materials, 1997., International Conference on
  • Conference_Location
    Cape Cod, MA
  • ISSN
    1092-8669
  • Print_ISBN
    0-7803-3898-7
  • Type

    conf

  • DOI
    10.1109/ICIPRM.1997.600266
  • Filename
    600266
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3041922