Enhanced fmax and Low Base Resistance in SiGe HBT with Nickel Silicidation

Author

Bae, Hyun-Cheol ; Kim, Sang-Hoon ; Song, Young-Joo ; Lee, Sang-Heung ; Lee, Ja-Yol ; Kang, Jin-Young

Author_Institution

High Speed SoC Res. Dept., Electron. & Telecommun. Res. Inst., Daejeon

fYear

2004

fDate

8-8 Dec. 2004

Firstpage

45

Lastpage

48

Abstract

This electronic paper reports on our investigation of enhanced fmax and low base resistance of SiGe HBT, in which Ni silicidation is performed on the Si/SiGe/Si base instead of Ti silicidation. The properties of nickel silicidation on Si/SiGe/Si layer are compared with those of Ti silicidation. It is found that Ni silicidation affects the base resistance (RB) of SiGe HBT, where RB is a summation of the intrinsic base resistance (R_INB) and the extrinsic base resistance (R_EXB). Comparing to the Ti silicided SiGe HBT, it shows about 10% enhanced fmax up to 41 GHz and above 70% reduced R_EXB of 9 Omega/square for Ni silicided SiGe HBT

Keywords

heterojunction bipolar transistors; nickel; silicon compounds; Ni; Si/SiGe/Si base; SiGe; SiGe HBT; base resistance; fmax; nickel silicidation; Atomic layer deposition; CMOS technology; Chemical vapor deposition; Epitaxial growth; Germanium silicon alloys; Heterojunction bipolar transistors; Nickel; Silicidation; Silicon germanium; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

Optoelectronic and Microelectronic Materials and Devices, 2004 Conference on

Conference_Location

Brisbane, Qld.

Print_ISBN

0-7803-8820-8

Type

conf

DOI

10.1109/COMMAD.2004.1577488

Filename

1577488