Title :
Enhanced fmax and Low Base Resistance in SiGe HBT with Nickel Silicidation
Author :
Bae, Hyun-Cheol ; Kim, Sang-Hoon ; Song, Young-Joo ; Lee, Sang-Heung ; Lee, Ja-Yol ; Kang, Jin-Young
Author_Institution :
High Speed SoC Res. Dept., Electron. & Telecommun. Res. Inst., Daejeon
Abstract :
This electronic paper reports on our investigation of enhanced fmax and low base resistance of SiGe HBT, in which Ni silicidation is performed on the Si/SiGe/Si base instead of Ti silicidation. The properties of nickel silicidation on Si/SiGe/Si layer are compared with those of Ti silicidation. It is found that Ni silicidation affects the base resistance (RB) of SiGe HBT, where RB is a summation of the intrinsic base resistance (RINB) and the extrinsic base resistance (REXB). Comparing to the Ti silicided SiGe HBT, it shows about 10% enhanced fmax up to 41 GHz and above 70% reduced REXB of 9 Omega/square for Ni silicided SiGe HBT
Keywords :
heterojunction bipolar transistors; nickel; silicon compounds; Ni; Si/SiGe/Si base; SiGe; SiGe HBT; base resistance; fmax; nickel silicidation; Atomic layer deposition; CMOS technology; Chemical vapor deposition; Epitaxial growth; Germanium silicon alloys; Heterojunction bipolar transistors; Nickel; Silicidation; Silicon germanium; Temperature;
Conference_Titel :
Optoelectronic and Microelectronic Materials and Devices, 2004 Conference on
Conference_Location :
Brisbane, Qld.
Print_ISBN :
0-7803-8820-8
DOI :
10.1109/COMMAD.2004.1577488
