DocumentCode
3042101
Title
High-rate-gas-flow microwave plasma etching of silicon
Author
Tsujimoto, K. ; Kumihashi, T. ; Kohuji, N. ; Tachi, S.
Author_Institution
Hitachi Ltd., Tokyo, Japan
fYear
1992
fDate
2-4 June 1992
Firstpage
46
Lastpage
47
Abstract
A high-rate-gas-flow plasma etching technique using a very low gas pressure and very high pumping rate is described. The principle of high-flow etching is discussed. A high etch rate of 1300 nm/min at 0.5 mtorr has been obtained for the Cl/sub 2/ ECR high-flow system with a bias of -50 V. Low gas pressure discharge with high flow rate is applicable to VLSI processing. Highly directional, low-contamination etching is possible using this etching system.<>
Keywords
VLSI; elemental semiconductors; integrated circuit technology; silicon; sputter etching; -50 V; 0.5 mtorr; VLSI processing; discharge; etch rate; flow rate; gas pressure; high-flow etching; low-contamination etching; plasma etching technique; pumping rate; Dry etching; Fabrication; Fluid flow; Laboratories; Plasma applications; Plasma simulation; Plasma temperature; Semiconductor device modeling; Silicon; Surface discharges;
fLanguage
English
Publisher
ieee
Conference_Titel
VLSI Technology, 1992. Digest of Technical Papers. 1992 Symposium on
Conference_Location
Seattle, WA, USA
Print_ISBN
0-7803-0698-8
Type
conf
DOI
10.1109/VLSIT.1992.200639
Filename
200639
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