Title :
High-rate-gas-flow microwave plasma etching of silicon
Author :
Tsujimoto, K. ; Kumihashi, T. ; Kohuji, N. ; Tachi, S.
Author_Institution :
Hitachi Ltd., Tokyo, Japan
Abstract :
A high-rate-gas-flow plasma etching technique using a very low gas pressure and very high pumping rate is described. The principle of high-flow etching is discussed. A high etch rate of 1300 nm/min at 0.5 mtorr has been obtained for the Cl/sub 2/ ECR high-flow system with a bias of -50 V. Low gas pressure discharge with high flow rate is applicable to VLSI processing. Highly directional, low-contamination etching is possible using this etching system.<>
Keywords :
VLSI; elemental semiconductors; integrated circuit technology; silicon; sputter etching; -50 V; 0.5 mtorr; VLSI processing; discharge; etch rate; flow rate; gas pressure; high-flow etching; low-contamination etching; plasma etching technique; pumping rate; Dry etching; Fabrication; Fluid flow; Laboratories; Plasma applications; Plasma simulation; Plasma temperature; Semiconductor device modeling; Silicon; Surface discharges;
Conference_Titel :
VLSI Technology, 1992. Digest of Technical Papers. 1992 Symposium on
Conference_Location :
Seattle, WA, USA
Print_ISBN :
0-7803-0698-8
DOI :
10.1109/VLSIT.1992.200639
